Transmission sputtering as a technique for measuring the distribution of energy deposited in solids by ion bombardment
Author:
Publisher
Informa UK Limited
Subject
General Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/00337577608233032
Reference38 articles.
1. Heavy-ion range profiles and associated damage distributions
2. Spatial distribution of defects in ion bombarded silicon and germanium
3. Interpretation of channeling effect measurements of disorder in ion‐implanted silicon
4. B⊘ttiger, J., Davies, J. A., Morgan, D. V., Whitton, J. L. and Winterbon, K. B. 1973.Ion Implantation in Semiconductors and Other MaterialsEdited by: Crowder, B. 599N.Y.: Plenum Press.
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2. Noble metal deposition on aluminum oxide powder surfaces by ion beam sputtering;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1998-05
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