Author:
B⊘gh E.,H⊘gild P.,Stensgaard I.
Reference11 articles.
1. Experimental investigation of orientation dependence of Rutherford scattering yield in single crystals
2. Defect studies in crystals by means of channeling
3. B⊘gh, E., H⊘gild, P. and Stensgaard, I. Proc. Intern. Symp. on Radiation Damage in Reactor Materials. Vol. 77, Vienna, Austria
4. Sigmund, P. and Sanders, J. B. Proc. Intern. Conf on Application of Ion Beams to Semiconductor Technology. Grenoble, France
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