Dose dependence of penetration and damage profiles of P+-channeled ions in silicon simulated by computer
Author:
Publisher
Informa UK Limited
Subject
General Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/00337577508233013
Reference16 articles.
1. Computer evaluation of primary deposited energy profiles in ion‐implanted silicon under channeling conditions
2. Doping and radiation damage profiles of P+ions implanted in silicon along the [110] axis
3. The energy dependence and depth distribution of lattice disorder in ion-implanted silicon
4. The distribution of damage produced by ion implantation of silicon at room temperature
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1. Chaotic phenomena of charged particles in crystal lattices;Chaos: An Interdisciplinary Journal of Nonlinear Science;2006-06
2. Stopping and damage parameters for Monte Carlo simulation of MeV implants in crystalline Si;Journal of Applied Physics;1997-12-15
3. Monte Carlo simulation of ion implantation in crystalline SiC;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-12
4. Peculiarities of heavy ion channeling;Radiation Effects and Defects in Solids;1993-01
5. Effect of annealing and oxide layer thickness on doping profile shape of “through-oxide” implanted P+ ions in textured silicon;Renewable Energy;1991-01
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