Computer evaluation of primary deposited energy profiles in ion‐implanted silicon under channeling conditions-Reference-Cited by-同舟云学术

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Computer evaluation of primary deposited energy profiles in ion‐implanted silicon under channeling conditions

Published:1972-09 Issue:9 Volume:43 Page:3755-3760
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Desalvo A.,Rosa R.,Zignani F.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1661804

Reference21 articles.

1. Computer studies of dechanneling effects on ion implantation profiles

2. The influence of temperature and channeling on ion-bombardment damage in Si

3. Computer Studies of the Slowing Down of Energetic Atoms in Crystals

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Peculiarities of heavy ion channeling;Radiation Effects and Defects in Solids;1993-01

2. Programs Based on the BCA Model;Computer Simulation of Ion-Solid Interactions;1991

3. Radiation Damage;Computer Simulation of Ion-Solid Interactions;1991

4. Ranges;Computer Simulation of Ion-Solid Interactions;1991

5. Two-dimensional modeling of ion implantation with spatial moments;Solid-State Electronics;1987-04

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