Author:
Cembali F.,Dori L.,Galloni R.,Servidori M.,Zignani F.
Cited by
24 articles.
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1. Implantation angle dependent study of vacancy related defect profiles in ion implanted silicon;Physica B: Condensed Matter;2003-12
2. Defect-impurity engineering in implanted silicon;Physics-Uspekhi;2003-08-31
3. Damage Production and Reduction of Single-Crystalline TiN Films by 1.8 MeV Carbon Beam Irradiation;Japanese Journal of Applied Physics;1992-12-15
4. Axial channeling of boron ions into silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1992-04
5. Channeling effects in high energy implantation of N+ in silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1992-01