A novel analytical threshold voltage model of MOSFETs with implanted channels
Author:
Publisher
Informa UK Limited
Subject
Electrical and Electronic Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/00207218608920909
Reference11 articles.
1. Calculation of threshold voltage in nonuniformly doped MOSFET's
2. A dynamic average model for the body effect in ion implanted short channel (L = 1µm) MOSFET's
3. n-channel ion-implanted enhancement/depletion FET circuit and fabrication technology
4. A new analysis of the threshold voltage for non-uniform ion-implant MOSFET's
5. Two-dimensional analytical modeling of threshold voltages of short-channel MOSFET's
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1. Development of an Analytical Model for Channel Potential in Junction-Less Double-Gate FETs;Sixth International Conference on Intelligent Computing and Applications;2021
2. A Physics-Based Threshold Voltage Model for Junction-Less Double Gate FETs Having Vertical Structural and Doping Asymmetry;IEEE Transactions on Electron Devices;2019-08
3. Analytical Modeling of Channel Potential and Threshold Voltage of Double-Gate Junctionless FETs With a Vertical Gaussian-Like Doping Profile;IEEE Transactions on Electron Devices;2016-06
4. Analytical modelling of the current ( I )–voltage ( V ) characteristics of sub‐micron gate‐length ion‐implanted GaAs MESFETs under dark and illuminated conditions;IET Circuits, Devices & Systems;2013-01
5. Modeling of photodependent capacitance for short gate-length ion-implanted GaAs MESFETs;16th International Workshop on Physics of Semiconductor Devices;2012-10-15
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