Two-dimensional analytical modeling of threshold voltages of short-channel MOSFET's
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx5/55/31920/01484357.pdf?arnumber=1484357
Cited by 37 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Analytical Modeling of DG-MOSFET in Subthreshold Regime by Green’s Function Approach;IEEE Transactions on Electron Devices;2017-08
2. Two-dimensional semi-analytical model of subthreshold surface potential and drain current for double-doping polysilicon gate MOSFET;Japanese Journal of Applied Physics;2015-04-22
3. Review and Critique of Analytic Models of MOSFET Short-Channel Effects in Subthreshold;IEEE Transactions on Electron Devices;2012-06
4. Two-Dimensional Analytical Threshold Voltage Modelling of Pseudomorphic Si0.8Ge0.2p-Channel MOSFETs;Acta Physica Polonica A;2011-12
5. A Variational Approach to the Two-Dimensional Nonlinear Poisson's Equation for the Modeling of Tunneling Transistors;IEEE Electron Device Letters;2008-11
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