Design of high efficient low power static logic circuit using SG FinFET-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Design of high efficient low power static logic circuit using SG FinFET

Published:2023-09-21 Issue: Volume: Page:1-18
ISSN:0020-7217
Container-title:International Journal of Electronics
language:en
Short-container-title:International Journal of Electronics

Author:

Rameya Sridharan Venkatesan¹,Alagarsamy Manjunathan²,Rajangam Balamurugan³,Sekar Lalitha⁴

Affiliation:

1. Department of Electronics and Communication Engineering, Dr. Mahalingam College of Engineering and Technology (Autonomous), Pollachi, Tamil Nadu, India

2. Department of Electronics and Communication Engineering, K. Ramakrishnan College of Technology, Trichy, Tamil Nadu, India

3. Department of Electronics and Communication Engineering, K. Ramakrishnan College of Engineering, Trichy, Tamil Nadu, India

4. Department of Electronics and Communication Engineering, Kongunadu college of engineering and technology, Trichy, Tamil Nadu, India

Publisher

Informa UK Limited

Subject

Electrical and Electronic Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/00207217.2023.2261081

Reference26 articles.

1. A Comprehensive Analysis of Different SRAM Cell Topologies in 7-nm FinFET Technology

2. A Variation-Adaptive Integrated Computational Digital LDO in 22-nm CMOS With Fast Transient Response

3. Analysis of radiation-induced transient errors on 7 nm FinFET technology

4. Comparing the Impact of Power Supply Voltage on CMOS- and FinFET-Based SRAMs in the Presence of Resistive Defects

5. A Dual Port 8T SRAM Cell Using FinFET & CMOS Logic for Leakage Reduction and Enhanced Read & Write Stability

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP