Analysis of radiation-induced transient errors on 7 nm FinFET technology-Reference-Cited by-同舟云学术

Analysis of radiation-induced transient errors on 7 nm FinFET technology

Published:2021-11 Issue: Volume:126 Page:114319
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Azimi S.,De Sio C.,Sterpone L.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Process Integration, Decicxes and Structure,2011

2. Review of FINFET technology;Jurczak,2009

3. Laser- and heavy ion-induced charge collection in bulk FinFETs;El-Mamouni;IEEE Trans. Nucl. Sci.,2011

4. Soft error trends in advanced silicon technology nodes;Bhuva,2018

5. Heavy-ion-induced current transients in bulk and SOI FinFETs;El-Mamouni;IEEE Trans. Nucl. Sci.,2012

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