Investigation of Si1−XGeX source dual material stacked gate oxide pocket doped hetero-junction TFET for low power and RF applications
Author:
Affiliation:
1. Department of Electronics and Communication Engineering, G.L Bajaj Institute of Technology and Management, Gr. Noida, India
2. Department of Electronics and Telecommunication, National Institute of Technology, Raipur, Chattisgarh, India
Publisher
Informa UK Limited
Subject
Electrical and Electronic Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/00207217.2023.2173804
Reference36 articles.
1. Device and circuit level performance analysis of novel InAs/Si heterojunction double gate tunnel field effect transistor
2. Investigation of gate material engineering in junctionless TFET to overcome the trade-off between ambipolarity and RF/linearity metrics
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4. Universality of Short-Channel Effects in Undoped-Body Silicon Nanowire MOSFETs
5. An Analytical Fringe Capacitance Model for Interconnects Using Conformal Mapping
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