Cutting-edge vertical tunnel FETs: GaSb/InSb heterojunction source-all-around tunnel FET with I60 of 2.73×10⁻⁴ A/μm and Sub-10 mV/dec SS-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Cutting-edge vertical tunnel FETs: GaSb/InSb heterojunction source-all-around tunnel FET with I60 of 2.73×10⁻⁴ A/μm and Sub-10 mV/dec SS

Published:2024-10 Issue: Volume:194 Page:207933
ISSN:2773-0123
Container-title:Micro and Nanostructures
language:en
Short-container-title:Micro and Nanostructures

Author:

Ramesh Potharaju^ORCID,Choudhuri Bijit

Publisher

Elsevier BV

Reference36 articles.

1. Robustness of raised buried oxide ferro electric tunnel FET in presence of temperature and traps and its analog/RF performance;Meriga;Appl. Phys. A,2024

2. Fabrication and characterization of a novel Si line tunneling TFET with high drive current;Cheng;IEEE Journal of the Electron Devices Society,2020

3. Experimental investigation of a novel junction-modulated hetero-layer tunnel FET with the striped gate for low power applications;Liang;Sci. China Inf. Sci.,2023

4. Operation principle and fabrication of TFET;Yirak;Advanced Ultra Low‐Power Semiconductor Devices: Design and Applications,2023

5. Recent progress on negative capacitance tunnel FET for low-power applications: device perspective;Upadhyay;Microelectron. J.,2022

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP