On triple dislocation nodes observed by TEM in a Ge0.4Si0.6film grown on a slightly deviating (0 0 1)Si substrate
Author:
Publisher
Informa UK Limited
Subject
Condensed Matter Physics
Link
http://www.tandfonline.com/doi/pdf/10.1080/09500839.2011.588612
Reference21 articles.
1. Specific features of formation and propagation of 60° and 90° misfit dislocations in GexSi1−x/Si films with x>0.4
2. Formation of edge misfit dislocations in GexSi1−x(x∼0.4–0.8) films grown on misoriented (001)→(111) Si substrates: Features before and after film annealing
3. Variation of dislocation morphology with strain in GexSi1−x epilayers on (100)Si
4. Effects of surface stress relaxation on the electron microscope images of dislocations normal to thin metal foils
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