Nitrogen doping and multiplicity of stacking faults in SiC
Author:
Publisher
Informa UK Limited
Subject
Condensed Matter Physics
Link
http://www.tandfonline.com/doi/pdf/10.1080/14786430600724470
Reference34 articles.
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2. Stacking Faults in 4H-SiC Single Crystal;Journal of Inorganic Materials;2018
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