Open core threading dislocations in GaN grown by hydride vapour phase epitaxy
Author:
Publisher
Informa UK Limited
Subject
Condensed Matter Physics
Link
http://www.tandfonline.com/doi/pdf/10.1080/14786430600690481
Reference21 articles.
1. Atomic and Electronic Structure of Mixed and Partial Dislocations in GaN
2. Observation of coreless dislocations in α-GaN
3. Observation of coreless edge and mixed dislocations in Mg-doped Al0.03Ga0.97N
4. The Effect of Growth Stoichiometry on the GaN Dislocation Core Structure
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