Peculiar failure mechanisms in GaN power transistors-Reference-Cited by-同舟云学术

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Peculiar failure mechanisms in GaN power transistors

Published:2020-11 Issue: Volume:114 Page:113896
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Vanzi M.,Mura G.

Funder

Ministero dell’Istruzione, dell’Università e della Ricerca

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. A review of GaN on SiC high electron-mobility power transistors and MMICs;Pengelly;IEEE Trans. Microw. Theory Tech.,2012

2. Qualification of GaN microwave transistors for the European Space Agency biomass mission;Barnes;Microelectron. Reliab.,2018

3. GaN HEMT Reliability Research – A White Paper;Zanoni,2017

4. Effect of field plate on the RF performance of AlGaN/GaN HEMT devices;Chiang;Phys. Procedia,2012

5. Impact of field-plate geometry on the reliability of GaN-on-SiC HEMTs;Chini;Microelectron. Reliab.,2013

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1. HAST test of electrical connectors for electronic control systems of new energy vehicles;2023 3rd New Energy and Energy Storage System Control Summit Forum (NEESSC);2023-09-26

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