Effect of Field Plate on the RF Performance of AlGaN/GaN HEMT Devices
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference10 articles.
1. Linearity characteristics of microwave-power GaN HEMTs;Nagy;Microwave Theory Tech.,2003
2. 10-W/mm AlGaN-GaN HFET with a field modulating plate;Ando;IEEE Electron Device Lett.,2003
3. Effect of Al Composition and Gate Recess on Power Performance of AlGaN/GaN High-Electron Mobility Transistors;Pei;IEEE Electron Device Lett.,2008
4. 30-W/mm GaN HEMTs by field plate optimization;Wu;IEEE Electron Device Lett.,2004
5. Improved power performance for a recessed-gate AlGaN-GaN heterojunction FET with a field-modulating plate;Okamoto;IEEE Trans. microwave theory tech.,2004
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5. Investigation of DC and RF characteristics of spacer layer thickness engineered recessed gate and field‐plated III‐nitride nano‐HEMT on β‐Ga2O3 substrate;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2023-06-07
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