Investigation of variable field plate length in GaN HEMT on SiC substrate for MMIC applications
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference26 articles.
1. Influence of Field Plate on the Transient Operation of the AlGaN/GaN HEMT
2. High breakdown voltage and low dynamic ON-resistance AlGaN/GaN HEMT with fluorine ion implantation in SiNx passivation layer;Yang;Nanoscale Res. Lett.,2019
3. Dynamic Characterizations of AlGaN/GaN HEMTs With Field Plates Using a Double-Gate Structure
4. Sub-1-dB Noise Figure Performance of High-Power Field-Plated GaN HEMTs
5. High Breakdown Voltage AlGaN–GaN HEMTs Achieved by Multiple Field Plates
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3. A high-breakdown-voltage β-Ga2O3 nanoFET with a beveled field-plate structure;Journal of Materials Chemistry C;2024
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5. Investigation on effect of AlN barrier thickness and lateral scalability of Fe-doped recessed T-gate AlN/GaN/SiC HEMT with polarization-graded back barrier for future RF electronic applications;Microelectronics Journal;2023-10
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