Electrical breakdown of M.O.S. structures and its dependence upon the oxidation process†
Author:
Publisher
Informa UK Limited
Subject
Electrical and Electronic Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/00207216908938174
Reference3 articles.
1. Characteristics of the Surface-State Charge (Qss) of Thermally Oxidized Silicon
2. An investigation of instability and charge motion in metal-silicon oxide-silicon structures
3. REJD , S. A. , 1968 , Ph.D. Dissertation , The Queen's University of Belfast .
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2. Breakdown in silicon oxide−A review;Journal of Vacuum Science and Technology;1977-09
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4. Dielectric Breakdown in Silicon Dioxide Films on Silicon;Journal of The Electrochemical Society;1972
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