A modification to defect accumulation models of amorphisation
Author:
Publisher
Informa UK Limited
Subject
General Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/01422448308209669
Reference9 articles.
1. Disorder production and amorphisation in ion implanted silicon
2. Swanson, M. L., Parsons, J. R. and Hoelke, C. W. 1971.Radiation Effects in Semiconductors, Edited by: Corbett and Watkins. 359London: Gordon & Breach Ltd.
3. Ion implantation in semiconductors—Part II: Damage production and annealing
4. Crystalline to amorphous transformation in ion‐implanted silicon: a composite model
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3. Radiation Damage and Amorphization Mechanisms in Xe+ Irradiated CuInSe2 Single Crystals;Materials Science Forum;1997-05
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5. Alpha-Decay-Induced Amorphization in Complex Silicate Structures;Journal of the American Ceramic Society;1993-07
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