Reduction in γ-ray damage in hydrogenated silicon
Author:
Publisher
Informa UK Limited
Subject
General Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/01422448208226881
Reference10 articles.
1. Kimerling, L. C. Radiation Effects in Semiconductors Institute of Physics Conf. Series No. 31 page 221. and references contained therein
2. Annealing of irradiation‐induced defects in arsenic‐doped silicon
3. Electron‐irradiation‐induced divacancy in lightly doped silicon
4. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. HYDROGEN IN CRYSTALLINE SEMICONDUCTORS: PART I—SILICON;International Journal of Modern Physics B;1994-04-20
2. Hydrogen effects on the electrical properties of electron-irradiated n-type Si epilayers;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1994-04
3. Radiation defects passivation by neutron irradiation of hydrogen-implanted silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1993-06
4. Hydrogen Passivation of γ-Induced Radiation Defects in n-Type Si Epilayers;Physica Status Solidi (a);1993-05-16
5. Atomic Hydrogen Regeneration and Defect Passivation in Hydrogenated Silicon under Neutron Irradiation;Physica Status Solidi (a);1993-05-16
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