The effect of electronegativity difference on the defect chemistry in lone-pair semiconductors
Author:
Affiliation:
1. a Department of Physics and The James Franck Institute , The University of Chicago , Chicago , Illinois , 60637 , U.S.A.
2. b Physics Department and Center for Materials Science and Engineering, MIT , Cambridge , Massachusetts , 02139 , U.S.A.
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/01418637808226453
Reference8 articles.
1. Optically induced metastable paramagnetic states in amorphous semiconductors
2. The effect of charged additives on the carrier concentrations in lone-pair semiconductors
3. Prediction of the influence of additives on the density of valence-alternation centres in lone-pair semiconductors
4. Valence-Alternation Model for Localized Gap States in Lone-Pair Semiconductors
5. Defect chemistry of lone-pair semiconductors
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