Humidity effect on electrical performance and bias stability of solution-processed In2O3 thin film transistor
Author:
Affiliation:
1. College of Physics, Qingdao University, Qingdao, Shandong, China
2. College of Microtechnology & Nanotechnology, Qingdao University, Qingdao, Shandong, China
Funder
the National Key Research and Development Program of China
the National Natural Science Foundation of China
Publisher
Informa UK Limited
Subject
Ceramics and Composites
Link
https://www.tandfonline.com/doi/pdf/10.1080/21870764.2022.2112373
Reference33 articles.
1. Electronic Devices Based on Oxide Thin Films Fabricated by Fiber-to-Film Process
2. Low-Temperature Fabrication of Nontoxic Indium Oxide Nanofibers and Their Application in Field-Effect Transistors
3. Strong Influence of Humidity on Low-Temperature Thin-Film Fabrication via Metal Aqua Complex for High Performance Oxide Semiconductor Thin-Film Transistors
4. Effect of relative humidity and pre-annealing temperature on spin-coated zinc tin oxide films made via the metal–organic decomposition route
5. Impact of Relative Humidity during Spin-Deposition of Metal Oxide Thin Films from Aqueous Solution Precursors
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