Impact of Relative Humidity during Spin-Deposition of Metal Oxide Thin Films from Aqueous Solution Precursors
Author:
Affiliation:
1. Department of Chemistry and Biochemistry and Material Science Institute, University of Oregon, Eugene, Oregon 97403, United States
Funder
Division of Chemistry
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,General Chemical Engineering,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.chemmater.6b05200
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1. Atomic layer deposited zinc tin oxide channel for amorphous oxide thin film transistors
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4. Solution-processed amorphous hafnium-lanthanum oxide gate insulator for oxide thin-film transistors
5. Reaction Pathway: Aqueous Hexatantalate Clusters to High-Density Tantalum Oxide Nanofilms
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