Influence of substrate temperature and annealing treatments on the properties of glow-discharge and sputtered a-SixC1−x:H films
Author:
Affiliation:
1. a Dipartimento di Fisica , Politecnico di Torino , Corso Duca degli Abruzzi 27, 10129, Torino , Italy
2. b IEN Galileo Ferraris , Str. delle Cacce 25, 10135, Torino , Italy
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642819108205555
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1. Method for the absolute calibration of photoacoustic cells
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5. New approach to optical analysis of absorbing thin solid films
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1. Annealing effects of highly homogeneous a-Si1−xCx:H;Journal of Non-Crystalline Solids;2003-11
2. Concentration and thermal release of hydrogen in amorphous silicon carbide films prepared by rf sputtering;Thin Solid Films;1997-12
3. Room-temperature deposition of a-SiC:H thin films by ion-assisted plasma-enhanced CVD;Thin Solid Films;1996-09
4. Growth Mechanism of Room‐Temperature Deposited a ‐ SiC : H Films by Ion‐Assisted RF Glow Discharge;Journal of The Electrochemical Society;1995-10-01
5. The role of π and π gaussian-like density-of-states bands in the interpretation of the physical properties of a-C and a-C:H films;Journal of Non-Crystalline Solids;1993-12
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