Concentration and thermal release of hydrogen in amorphous silicon carbide films prepared by rf sputtering

Author:

Suzaki Y,Shikama T,Yoshioka S,Yoshii K,Yasutake K

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

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3. Effect of initial-annealing on the microstructure of C–SiC/Cu composite coatings;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2013-07

4. Effect of initial-annealing on thermal stability of hydrogen in C–SiC:H films;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2012-09

5. Formation and behavior of unbonded hydrogen in a-C:H of various compositions and densities;Surface and Coatings Technology;2009-09

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