Fabrication and comparison of ferroelectric capacitor structures for memory applications-Reference-Cited by-同舟云学术

Fabrication and comparison of ferroelectric capacitor structures for memory applications

Published:1997-04 Issue:1-4 Volume:16 Page:139-147
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Chung Chee Won¹,Lee June K.¹,Kim Chang Jung¹,Chung Ilsub¹

Affiliation:

1. a Materials and Devices Research Center , Samsung Advanced Institute of Technology , P.O. Box 111, Suwon, 440-600, Korea

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584589708013035

Reference7 articles.

1. Ferroelectric materials for 64 Mb and 256 Mb DRAMs

2. Ferroelectric thin film technology for semiconductor memory

3. Characterization of an N-channel 1T-1C nonvolatile memory cell using ferroelectric SrBi2Ta2O9 as the capacitor dielectric

4. Si LSI Process Technology for Integrating Ferroelectric Capacitors

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