PZT capacitors using IrO2 electrode by RF magnetron sputtering
Author:
Affiliation:
1. a Semiconductor Research Division , HYUNDAI Electronics Industries Co., Ltd. , Bubal-eup, Ichon-si, Kyungki-do, 467-701 , Korea
Publisher
Informa UK Limited
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials
Link
https://www.tandfonline.com/doi/pdf/10.1080/10584589808202091
Reference8 articles.
1. Device effects of various Zr/Ti ratios of PZT thin-films prepared by sol-gel method
2. Effect of composition and annealing conditions on the electrical properties of Pb(ZrxTi1−x)O3 thin films deposited by the sol-gel process
3. Growth of epitaxial Pb(Zr,Ti)O3films by pulsed laser deposition
4. Cheung , J. T. Morgan , P. E. D. and Neurgaonkar , R. 1992. Proceedings of the 4thInternational Synposium on Integrated Ferroelectrics. 1992, Colorado Springs. pp.518
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