Device effects of various Zr/Ti ratios of PZT thin-films prepared by sol-gel method-Reference-Cited by-同舟云学术

Device effects of various Zr/Ti ratios of PZT thin-films prepared by sol-gel method

Published:1992-07 Issue:2-4 Volume:1 Page:293-304
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Watanabe H.¹,Mihara T.¹,De Araujo C. A. Paz²

Affiliation:

1. a Olympus Optical Co Ltd., Hachioji , Tokyo, 192, Japan

2. b Microelectronics Research Laboratiries , University of Colorado , Colorado Springs

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584589208215718

Reference14 articles.

1. Scott , J. F. and Paz de Araujo , C. A. 1987. Mol Electron 206–214.

2. Ferroelectric memories: a possible answer to the hardened nonvolatile question

3. Ueda , I. Iijima , K. and Kugiyama , K. 1990. 316–319. Abstract of the fifth U. S.Japan seminar on dielectric and piezoelectric ceramics, IV-11

4. Preparation of PbZrO3-PbTiO3 Ferroelectric Thin Films by the Sol-Gel Process

5. Shiosaki , T. and Okamura , T. 1990. 329–332. Abstract of the fifth U. S.Japan seminar on dielectric and piezoelectric ceramics, IV-14

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