Crystal structure, microstructure and ferroelectric properties of PZT(55/45) and PZT(80/20) thin films due to various buffer layers
Author:
Publisher
Informa UK Limited
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://www.tandfonline.com/doi/pdf/10.1080/00150190108016005
Reference6 articles.
1. Device effects of various Zr/Ti ratios of PZT thin-films prepared by sol-gel method
2. Characterization of single layer PZT (53/47) films prepared from an air-stable sol-gel route
3. Physical and Dielectric Properties of (1-x)PbZrO3·xBaTiO3 Thin Films Prepared by Chemical Solution Deposition
4. Influence of Buffer Layer Insertion and Annealing Mode upon Microstructures and Ferroelectric Characteristics of Sol-Gel-DerivedPb(Zrx,Ti1-x)O3Thin Films
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Structural Correlation to Piezoelectric and Ferroelectric Mechanisms in Rhombohedral Pb(Zr,Ti)O3 Ceramics by in-Situ Synchrotron Diffraction;Inorganic Chemistry;2018-03-07
2. Polarization fatigue in ferroelectric thin films and related materials;Journal of Applied Physics;2009-01-15
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