Characteristics of ferroelectric SrBi2Ta2O9 thin films grown by “flash” MOCVD-Reference-Cited by-同舟云学术

Characteristics of ferroelectric SrBi2Ta2O9 thin films grown by “flash” MOCVD

Published:1997-01 Issue:1-4 Volume:14 Page:95-103
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Isobe C.¹,Ami T.²,Hironaka K.²,Watanabe K.²,Sugiyama M.²,Nagel N.²,Katori K.²,Ikeda Y.²,Gutleben C. D.²,Tanaka M.²,Yamoto H.²,Yagi H.²

Affiliation:

1. b Materials Research Laboratory, Sony Research Center , 174 Fujitsuka-cho, Hodogaya, Yokohama , 240 , Japan

2. a Yagi Microdevices Laboratory, Sony Research Center , 4-14-1 Asahi-cho, Atsugi, Kanagawa , 243 , Japan

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584589708019981

Reference10 articles.

1. Correlations Among Degradations in Lead Zirconate Titanate thin Film Capacitors

2. Electronic domain pinning in Pb(Zr,Ti)O3thin films and its role in fatigue

3. Characteristic Change Due to Polarization Fatigue of Sol-Gel FerroelectricPb(Zr0.4Ti0.6)O3Thin-Film Capacitors

4. Fatigue-free ferroelectric capacitors with platinum electrodes

5. Characteristics of Bismuth LayeredSrBi2Ta2O9Thin-Film Capacitors and Comparison withPb(Zr,Ti)O3

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