Non-volatile memories using SrBi2Ta2O9 ferroelectrics-Reference-Cited by-同舟云学术

Non-volatile memories using SrBi2Ta2O9 ferroelectrics

Published:1997-09 Issue:1-4 Volume:17 Page:21-30
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Jones R. E.¹,Chu P. Y.¹,Jiang B.¹,Melnick B. M.¹,Taylor D. J.¹,White B. E.¹,Zafar S.¹,Price D.²,Zurcher P.¹,Gillespie S. J.¹,Otsuki T.³,Sumi T.⁴,Judai Y.³,Uemoto Y.³,Fujii E.³,Hayashi S.³,Moriwaki N.⁴,Azuma M.³,Shimada Y.³,Arita K.³,Hirano H.⁴,Nakane J.⁴,Nakakum T.⁴,Kano G.³

Affiliation:

1. a Motorola, Materials Research and Strategic Technologies , 3501 Ed Bluestein Blvd., MD-K10, Austin, Texas, 78721, U.S.A.

2. b Motorola, Advanced Design Technology , Tempe, AZ, 85284, U.S.A.

3. c Matsushita Electronics Corp, Electronics Research Laboratory , Takatsuki, Japan

4. d Matsushita Electronics Corp., Kyoto Research Laboratory , Kyoto, Japan

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584589708012978

Reference11 articles.

1. Preparation and ferroelectric properties of SrBi2Ta2O9 thin films

2. SrBi2Ta2O9 Capacitors for a Mega-Bit Ferroelectric Nonvolatile Memory

3. The Evaluation of SrBi2Ta2O9 Films for Ferroelectric Memories

4. Characteristics of spin-on ferroelectric SrBi2Ta2O9 thin film capacitors for ferroelectric random access memory applications

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