Affiliation:
1. a Microelectronics Laboratory, Materials and Device Sector , Samsung Advanced Institute of Technology , Suwon, 440-600, Korea
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials
Reference12 articles.
1. Lee , S. Y.
Jung , D. J.
Song , Y. J.
Koo , B. J.
Park , S. O.
Cho , H. J.
Oh , S. J.
Hwang , D. S.
Lee , S. I.
Lee , J. K.
Park , Y. S.
Jung , I. S. and
Kim , Kinam . Symposium on VLSI Technology Digest of Technical Papers. pp.p. 141
2. Electrode dependence of hydrogen-induced degradation in ferroelectric Pb(Zr,Ti)O3 and SrBi2Ta2O9 thin films
3. The effects of the catalytic nature of capacitor electrodes on the degradation of ferroelectric Pb(Zr,Ti)O3 thin films during reductive ambient annealing
4. Effect ofSiO2Film Deposition on the Ferroelectric Properties of aPt/Pb(Zr,Ti)O3/PtCapacitor
5. Characterization and elimination of dry etching damaged layer in Pt/Pb(Zr0.53Ti0.47)O3/Pt ferroelectric capacitor