Electrical properties of Y1-based ferroelectric gate MOS capacitors for nonvolatile memory applications-Reference-Cited by-同舟云学术

Electrical properties of Y1-based ferroelectric gate MOS capacitors for nonvolatile memory applications

Published:1999-11 Issue:1-4 Volume:27 Page:19-29
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Arita K.¹,Otsuki T.²,Chen Z.³,Lim M.⁴,Bacon J. W.²,Paz De Araujo C. A.³⁴

Affiliation:

1. a Panasonic Technologies, Inc. , 5055 Mark Dabling Boulevard, Colorado Springs, CO, 80918, USA

2. b Electronics Research Laboratory , Matsushita Electronics Corporation , 1-1 Saiwai-cho, Takatsuki, Osaka, 569-1193, JAPAN

3. c Department of Electrical and Computer Engineering , University of Colorado , 1420 Austin Bluffs Parkway, Colorado Springs, CO, 80933-7150, USA

4. d Symetrix Corporation , 5055 Mark Dabling Boulevard, Colorado Springs, CO, 80918-3862, USA

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584589908228452

Reference11 articles.

1. Fatigue-free ferroelectric capacitors with platinum electrodes

2. Quantum jumps in FeRAM technology and performance

3. Formation of Metal/Ferroelectric/Insulator/Semiconductor Structure with aCeO2Buffer Layer

4. The role of leakge current on the memory window and memory retention in MFIS structure

5. Sr2(Ta, Nb)2O7 ferroelectric thin film for ferroelectric memory FET

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1. Epitaxial structure SrBi2Ta2O9<116> /SrTiO3<011> /Ce0.12Zr0.88O2<001> /Si<001> for ferroelectric-gate FET memory;Integrated Ferroelectrics;2001-01