The role of leakge current on the memory window and memory retention in MFIS structure-Reference-Cited by-同舟云学术

The role of leakge current on the memory window and memory retention in MFIS structure

Published:1998-03 Issue:1-4 Volume:22 Page:205-211
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Lim M.¹,Kalkur T. S.²

Affiliation:

1. b Symetrix Corporation , Colorado , Springs

2. a Microelectronics Research Laboratories, Department of Electrical and Computer Engineering University of Colorado at Colorado Springs , CO , 80933-7150

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584589808208042

Reference15 articles.

1. A new solid state memory resistor

2. Metal-ferroelectric-semiconductor characteristics of bismuth titanate films on silicon

3. Electrical characteristics of aluminum-zirconium oxide-barium magnesium fluoride-p silicon MIS capacitors

4. Ferroelectric memories: A comparison with other high-speed digital devices

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