Sr2(Ta, Nb)2O7 ferroelectric thin film for ferroelectric memory FET-Reference-Cited by-同舟云学术

Sr2(Ta, Nb)2O7 ferroelectric thin film for ferroelectric memory FET

Published:1998-09 Issue:1-4 Volume:21 Page:73-82
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Fujimori Yoshikazu¹,Izumi Naoki¹,Nakamura Takashi¹,Kamisawa Akira¹

Affiliation:

1. a ROHM CO., LTD. , 21, Saiin Mizosaki–cho, Ukyo–ku, Kyoto , 615-8585 , Japan

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584589808202052

Reference5 articles.

1. Study on ferroelectric thin films for application to NDRO non-volatile memories

2. Ferroelectric memory FET with Ir/IrO2 electrodes

3. ESR Study of Orthorhombic Fe3+ Centers in Sr2Ta2O7 and Sr2Nb2O7

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