SBT-based ferroelectric FET for nonvolatile non-destructive read out (NDRO) memory applications-Reference-Cited by-同舟云学术

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SBT-based ferroelectric FET for nonvolatile non-destructive read out (NDRO) memory applications

Published:1999-11 Issue:1-4 Volume:27 Page:71-80
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Lim M.¹,Bacon J. W.¹,McMillan L. D.¹,Paz De Araujo C. A.¹

Affiliation:

1. a Symetrix Corporation , 5055 Mark Dabling Boulevard, Colorado Springs, Co, 80918-3862, USA

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584589908228457

Reference8 articles.

1. Photoluminescence of Si Nanocrystals Created by Heavy Ion Irradiation of Amorphous SiO Films

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1. Implementing Boolean Logic in Ferroelectric Field‐Effect Transistors;Advanced Electronic Materials;2023-02-14

2. A Method to Measure Polarization Signal of Nanoscale One-Transistor-One-Capacitor Ferroelectric Memory;IEEE Electron Device Letters;2022-06

3. Analysis of increase in forward transconductance to determine the critical point of polarization at ferroelectric 1T1C memory;Applied Physics Letters;2021-05-17

4. Material Aspects in Emerging Nonvolatile Memories;Journal of The Electrochemical Society;2004

5. A read-disturb-free ferroelectric gate fet memory;Integrated Ferroelectrics;2001-02

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