The temperature dependence of ferroelectric imprint-Reference-Cited by-同舟云学术

The temperature dependence of ferroelectric imprint

Published:1995-10 Issue:1-4 Volume:10 Page:279-288
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Benedetto J. M.¹²,Roush M. L.²,Lloyd I. K.²,Ramesh R.²,Rychlik B.³

Affiliation:

1. a Army Research Laboratory , Adelphi, MD, 20783

2. b University of Maryland , College Park, MD, 20742

3. c Carnegie-Mellon University , Pittsburgh, PA, 15213

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584589508012284

Reference4 articles.

1. Imprint of ferroelectric PLZT thin-film capacitors with lanthanum strontium cobalt oxide electrodes

2. Ramesh , R. Gilchrist , H. Sands , T. Keramidas , V. G. Haakenaasen , R. and Fork , D. K. 1993. 3592 “Ferroelectric La-Sr-Co)/Pb-Zr-Ti-O/La-Sr-Co-O Heterostructures on Silicon Via Template Growth,” APL 63

3. Fast decay component of the remanent polarization in thin-film PZT capacitors

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