Imprint issue during retention tests for HfO2-based FRAM: An industrial challenge?-Reference-Cited by-同舟云学术

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Imprint issue during retention tests for HfO2-based FRAM: An industrial challenge?

Published:2021-02-22 Issue:8 Volume:118 Page:082901
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Bouaziz J.¹²^ORCID,Rojo Romeo P.¹,Baboux N.²,Vilquin B.¹^ORCID

Affiliation:

1. Université de Lyon, Institut des Nanotechnologies de Lyon (UMR5270/CNRS), Ecole Centrale de Lyon, 36 avenue Guy de Collongue, F-69134 Ecully Cedex, France

2. Université de Lyon, Institut des Nanotechnologies de Lyon (UMR5270/CNRS), INSA, Bât. Blaise Pascal, 7 avenue Jean Capelle, F-69621 Villeurbanne Cedex, France

Funder

European Union's Horizon H2020 research and innovation programme

NanoLyon technology platform

Institut des Nanotechnologies de Lyon

Ecole Centrale de Lyon

Institut National des Sciences Appliquées de Lyon

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0035687

Reference36 articles.

1. Ferroelectricity in hafnium oxide thin films

2. Bulk Depolarization Fields as a Major Contributor to the Ferroelectric Reliability Performance in Lanthanum Doped Hf 0.5 Zr 0.5 O 2 Capacitors

3. Reliability Characteristics of Ferroelectric $ \hbox{Si:HfO}_{2}$ Thin Films for Memory Applications

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Inhibiting the imprint effect of the TiN/HZO/TiN ferroelectric capacitor by introducing a protective HfO2 layer;AIP Advances;2024-08-01

2. Wake-Up and Imprint Effects in Hafnium Oxide-Based Ferroelectric Capacitors during Cycling with Different Interval Times;Electronics;2024-03-08

3. Variability and Reliability Study of Nano-Scale Hf_0.5Zr_0.5O₂ Ferroelectric Devices Using O₃ Treatment;IEEE Electron Device Letters;2024-03

4. Quantification of Crystalline Phases in Hf_0.5Zr_0.5O₂ Thin Films through Complementary Infrared Spectroscopy and Ab Initio Supercell Simulations;ACS Applied Materials & Interfaces;2024-01-12

5. Interplay between Strain and Defects at the Interfaces of Ultra‐Thin Hf_0.5Zr_0.5O₂‐Based Ferroelectric Capacitors;Advanced Electronic Materials;2023-08-09

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