Basic sputtering process and ferroelectric properties of single–domain single–crystal thin films of PbTiO3-Reference-Cited by-同舟云学术

Basic sputtering process and ferroelectric properties of single–domain single–crystal thin films of PbTiO3

Published:1998-09 Issue:1-4 Volume:21 Page:451-460
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Wasa Kiyotaka¹,Haneda Yoko²,Sato Toshifumi³,Adachi Hideaki³,Kanno Isaku³,Schlom Darrell G.⁴,Trolier-Mckinstry S.⁴,Gan Qing⁵,Eom Chang-Beom⁵

Affiliation:

1. a Yokohama City Univ. , Yokohama , 236 , Japan

2. b RITE, Kizu , Kyoto , 619–02 , Japan

3. c Central Res. Lab. Matsushita Elec. , Seikacho, Kyoto , 619–02 , Japan

4. d Dept. of Mater. Sci. and Eng. , Penn. State Univ. , Univ. Park , PA , 16802 , USA

5. e Dept. of Mech. Eng. & Mater. Sci. , Duke Univ. , Durham , NC , 27708–0300 , USA

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584589808202085

Reference16 articles.

1. Growth of high quality single‐domain single‐crystal films of PbTiO3

2. Basic deposition process and ferroelectric properties of sputtered PLZT thin films

3. Effects of PLT-buffer layer on microstructures of sputtered PLZT thin films epitaxially grown on sapphire

4. Domain formation and strain relaxation in epitaxial ferroelectric heterostructures

5. Strain relaxation by domain formation in epitaxial ferroelectric thin films

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