Thermal Boundary Resistance in GaN Films Measured by Time Domain Thermoreflectance with Robust Monte Carlo Uncertainty Estimation-Reference-Cited by-同舟云学术

Thermal Boundary Resistance in GaN Films Measured by Time Domain Thermoreflectance with Robust Monte Carlo Uncertainty Estimation

Published:2016-01-02 Issue:1 Volume:20 Page:22-32
ISSN:1556-7265
Container-title:Nanoscale and Microscale Thermophysical Engineering
language:en
Short-container-title:Nanoscale and Microscale Thermophysical Engineering

Author:

Bougher Thomas L.¹,Yates Luke¹,Lo Chien-Fong²,Johnson Wayne²,Graham Samuel³,Cola Baratunde A.³

Affiliation:

1. George W. Woodruff School of Mechanical Engineering and Heat Lab, Georgia Institute of Technology, Atlanta, Georgia, USA

2. IQE, Taunton, Massachusetts, USA

3. George W. Woodruff School of Mechanical Engineering; School of Material Science and Engineering; and Heat Lab, Georgia Institute of Technology, Atlanta, Georgia, USA

Funder

National Science Foundation

Publisher

Informa UK Limited

Subject

Mechanics of Materials,Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics

Link

https://www.tandfonline.com/doi/pdf/10.1080/15567265.2016.1154630

Reference30 articles.

1. Improving GaN-on-silicon properties for GaN device epitaxy

2. Nanoscale thermal transport. II. 2003–2012

3. Lattice parameters and thermal expansion of GaN

4. Surface Lattice Constants of Si(111), Ni(111) and Cu(111)

5. Interpreting picosecond acoustics in the case of low interface stiffness

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