Robust Thermal Transport across the Surface-Active Bonding SiC-on-SiC-Reference-Cited by-同舟云学术

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Robust Thermal Transport across the Surface-Active Bonding SiC-on-SiC

Published:2024-04-10 Issue: Volume: Page:
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Ma Guoliang¹,Xiao Xinglin¹,Meng Biwei¹,Ma Yunliang¹,Xing Xiangjie²,Wang Xinhua²^ORCID,Mu Fengwen³,Yuan Chao¹^ORCID

Affiliation:

1. The Institute of Technological Sciences, Wuhan University, Wuhan 430072, China

2. Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China

3. Innovative Semiconductor Substrate Technology Co., Ltd. No.25, Huayuan North Road, Haidian District, Beijing 100083, China

Funder

Youth Innovation Promotion Association of the Chinese Academy of Sciences

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.4c02161

Reference69 articles.

1. 4H-silicon-carbide-on-insulator for integrated quantum and nonlinear photonics

2. Komeda, S.; Tsuboi, Y.; Fujita, H.; 70 kHz, 15 kW Silicon-Carbide MOSFET Inverter for Industrial Induction Heating Systems, International Power Electronics Conference (IPEC-ECCE-ASIA), Hiroshima, JAPAN, May 18–21; IEEE Hiroshima, JAPAN, 2014; pp 1160–1165.

3. Post-annealing processes to improve inhomogeneity of Schottky barrier height in Ti/Al 4H-SiC Schottky barrier diode

4. 4H-SiC Piezoresistive Pressure Sensors at 800 °C With Observed Sensitivity Recovery

5. Direct Wafer Bonding of SiC-SiC by SAB for Monolithic Integration of SiC MEMS and Electronics

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