Recombination in amorphous SiNx: H alloys-Reference-Cited by-同舟云学术

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Recombination in amorphous SiNx: H alloys

Published:1988-02 Issue:2 Volume:57 Page:243-257
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Lowe A. J.¹²,Cavenett B. C.¹³,Powell M. J.⁴

Affiliation:

1. a Department of Physics , University of Hull , Hull , England

2. c GEC Hirst Research Centre , Wembley , England

3. d Department of Physics , Heriot-Watt University , Edinburgh , Scotland

4. b Philips Research Laboratories , Cross Oak Lane, Redhill, Surrey , England

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/13642818808201618

Reference42 articles.

1. Silicon nitride trap properties as revealed by charge−centroid measurements on MNOS devices

2. Photoluminescence properties of a-SiNx: H alloys

3. Structural properties of a-SiC:H- and a-SiN:H-Alloys from XPS-analyses and IR-absorption

4. Spin dependent luminescence in hydrogenated amorphous silicon

5. Recombination processes ina-Si: H. A study by optically detected magnetic resonance

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Spin-dependent processes in amorphous and microcrystalline silicon: a survey;Journal of Non-Crystalline Solids;2000-05

2. Triplet excitons in porous silicon and siloxene;Solid State Communications;1995-02

3. Properties of sputtered a-SiO :H alloys with a visible luminescence;Journal of Non-Crystalline Solids;1993-12

4. Two-Dimensional Excitons in Siloxene;MRS Proceedings;1993

5. Observation of Light-Induced Phenomena by Photoluminescence and Optically Detected Magnetic Resonance in a-Si1-xNx:H;Journal of the Physical Society of Japan;1991-05-15

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