Photoluminescence properties of a-SiNx: H alloys
Author:
Affiliation:
1. a University of Shefield , Sheffield , S3 7RH , England
2. c Division of Chemistry , NRC , 152 Sussex Drive, Ottowa, Ontario , K1A OR6 , Canada
3. b Carnegie Laboratory of Physics , University of Dundee , Dundee , Scotland
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642818508240600
Reference30 articles.
1. Electrical and optical properties of amorphous silicon carbide, silicon nitride and germanium carbide prepared by the glow discharge technique
2. Austin , I. G. 1984. MRS Symposium on Poly-crystalline and Amorphous Semiconductors, 485Strasbourg: Editions de Physique.
3. Low energy excitation of photoluminescence in a-Si:H : Temperature and intensity effects
4. Recombination processes ina-Si: H. A study by optically detected magnetic resonance
5. Photoluminescence in amorphous alloys: a-SiOx:H, a-SiNx:H, a-SixC1-x:H
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