Photoluminescence in sputtered amorphous silicon-hydrogen alloys-Reference-Cited by-同舟云学术

Photoluminescence in sputtered amorphous silicon-hydrogen alloys

Published:1980-04 Issue:4 Volume:41 Page:393-417
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Paesler M. A.¹,Paul William¹

Affiliation:

1. a Division of Applied Sciences , Harvard University , Cambridge , Massachusetts , 02138 , U.S.A.

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/13642818008245396

Reference43 articles.

1. Importance of argon pressure in the preparation of rf‐sputtered amorphous silicon–hydrogen alloys

2. Photoconductivity and recombination in doped amorphous silicon

3. Photoluminescence and lifetime studies on plasma discharge a-Si

4. Austin , I. G. Richards , K. Searle , T. M. Thompson , M. J. Alaisi , M. M. Thomas , I. P. and Allison , J. 1979a. Physics of Semiconductors 1978, Inst. Phys. Conf. Ser. No. 43 Edited by: Wilson , B. L. H. 1155London, Bristol: The Institute of Physics.

5. Spin dependent luminescence in hydrogenated amorphous silicon

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