Thermoelectric power and electronic transport in thermal-LPCVD amorphous silicon-boron films-Reference-Cited by-同舟云学术

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Thermoelectric power and electronic transport in thermal-LPCVD amorphous silicon-boron films

Published:1989-05 Issue:5 Volume:59 Page:543-559
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Chik K. P.¹,Chan P. H.¹,Tam K. H.¹,Tong B. Y.²,Wong S. K.³,John P. K.²

Affiliation:

1. a Department of Physics , The Chinese University of Hong Kong , Shatin, New Territories, Hong Kong

2. b Physics Department , University of Western Ontario , London , Ontario , N6A 3K7 , Canada

3. c Chemistry Department , University of Western Ontario , London , Ontario , N6A 3K7 , Canada

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/13642818908211176

Reference29 articles.

1. Transport properties of a-Si: H alloys prepared by r.f. sputtering

2. Post-hydrogenation of thermal LPCVD a-Si films

3. Transport in lithium-doped amorphous siliconf

4. Beyer , W. Mell , H. and Overhof , H. 1977. Amorphous and Liquid Semiconductors, Edited by: Spear , W. A. 328Edinburgh University Press.

5. New amorphous silicon-boron alloy

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optical absorption and transport mechanisms of dual ion-beam-deposited boron-rich boron nitride films;Thin Solid Films;2001-06

2. In search of a normal Hall effect in amorphous silicon;Journal of Non-Crystalline Solids;1993-12

3. Effects of Si incorporation on the structural change ofa‐BxSi1−xalloy films;Journal of Applied Physics;1993-11-15

4. Optical absorption of a-B and a-B1−xSix films prepared by LPCVD method;Journal of Non-Crystalline Solids;1991-01

5. Electronic transport in amorphous and microcrystalline phosphorus-doped silicon films prepared by thermal LPCVD;Philosophical Magazine B;1990-03

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