Transport properties of a-Si: H alloys prepared by r.f. sputtering

Author:

Anderson D. A.12,Paul W.1

Affiliation:

1. a Division of Applied Sciences , Harvard University , Cambridge , Massachusetts , 02138 , U.S.A.

2. b R.S.R.E. , Malvern , Wores , U.K.

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Reference37 articles.

1. Allan , D. Le Comber , P. G. and Spear , W. E. 1977. “Proceedings of The Seventh International Conference on Amorphous and Liquid Semiconductors”. Edited by: Spear , W. E. 323University of Edinburgh: CICL.

2. Characterization of high gap state densitites in heavily hydrogenated a-Si

3. Transport properties of a-Si: H alloys prepared by r.f. sputtering I

4. Thickness and temperature dependence of the conductivity of phosphorus-doped hydrogenated amorphous silicon

5. Doping of evaporated amorphous silicon films

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