A theory of capacitance-voltage measurements on amorphous silicon Schottky barriers
Author:
Affiliation:
1. a Department of Applied Physics and Electronics , University of Durham , Durham , England
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642818208246325
Reference5 articles.
1. Capacitance Energy Level Spectroscopy of Deep‐Lying Semiconductor Impurities Using Schottky Barriers
2. The interpretation of capacitance and conductance measurements on metal-amorphous silicon barriers
3. An investigation of the amorphous-silicon barrier and p-n junction
4. Determination of the electronic density of states in hydrogenated amorphous silicon (a-SiH) from Schottky diode capacitance-voltage and conductance-voltage measurements
5. Interpretation of the conductance and capacitance frequency dependence of hydrogenated amorphous silicon Schottky barrier diodes
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