Determination of the electronic density of states in hydrogenated amorphous silicon (a-SiH) from Schottky diode capacitance-voltage and conductance-voltage measurements-Reference-Cited by-同舟云学术

Determination of the electronic density of states in hydrogenated amorphous silicon (a-SiH) from Schottky diode capacitance-voltage and conductance-voltage measurements

Published:1980-01 Issue: Volume:35-36 Page:569-574
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Viktorovitch P.,Jousse D.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. An investigation of the amorphous-silicon barrier and p-n junction

2. Diodes Schottky et MIS tunnel sur silicium amorphe hydrogéné de qualité photovoltaïque préparé par pulvérisation cathodique Caractérisation électrique par mesures capacitives

3. Proc. of the 1979 Photovoltaic Solar Energy Conf.;Vieux-Rochaz,1979

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