Raman studies of non-stoichiometric amorphous GaSb films-Reference-Cited by-同舟云学术

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Raman studies of non-stoichiometric amorphous GaSb films

Published:1984-01 Issue:1 Volume:49 Page:63-71
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Carles R.¹,Renucci J. B.¹,Gheorghi A.²,Theye M.-L.²

Affiliation:

1. a Laboratoire de Physique des Solides, L.A. C.N.R.S. 74 , Université Paul Sabatier , 118 route de Narbonne, 31062, Toulouse , Cedex , France

2. b Laboratoire d'Optique des Solides, E.R.A. C.N.R.S. 462 , Université Pierre et Marie Curie , 4 place Jussieu, 75230, Paris , Cedex , 05 , France

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/13642818408246500

Reference20 articles.

1. Lattice dynamics of GaSb

2. ELECTRONIC PROPERTIES OF FLASH-EVAPORATED AMORPHOUS GaSb FILMS

3. Temperature Dependence of the Raman Spectrum and the Depolarization Spectrum of AmorphousAs2S3

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1. Oxidation effects on InAs/GaSb (100) films deposited by DC magnetron sputtering during post-annealing;Vacuum;2024-09

2. Co-sputtered phase-change Ga–Sb–Te thin films;Materials Advances;2024

3. Improvement the InAs, InSb, GaAs and GaSb surface state by nanoscale wet etching;Applied Nanoscience;2021-04-01

4. Formation of the InAs-, InSb-, GaAs-, and GaSb-polished surface;Applied Nanoscience;2018-04-24

5. Controllable multilevel resistance state of superlattice-like GaSb/Ge2Te films for ultralong retention phase-change memory;Journal of Non-Crystalline Solids;2018-02

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