Role of dopants in pressure-induced effects in glassy GeSe3·5 containing Bi and Sb
Author:
Affiliation:
1. a Department of Physics , Maharshi Dayanand University , Rohtak , 124001 , India
2. b Instrumentation and Services Unit, Indian Institute of Science , Bangalore , 560 012 , India
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642818508243146
Reference13 articles.
1. High pressure clamp for electrical measurements up to 8 GPa and temperature down to 77 K
2. Structural changes induced by Bi doping in n-type amorphous (GeSe3.5) 100−xBix
3. Electrical transport in Bi doped n-type amorphous semiconductors (GeSe3.5)100−xBix at high pressure
4. Glassy Semiconductors
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